Magnetron sputtering, medium frequency magnetron sputtering equipment
Magnetron sputtering is divided into many types. Contains different working principles and application objects. But one thing in common is the principle of magnetron sputtering: the interaction of the magnetic field and the electrons causes the electrons to spiral in the vicinity of the target surface, thereby increasing the probability that electrons will strike the argon gas to generate ions. The generated ions collide with the target surface under the action of an electric field to sputter the target. After years of development, in magnetron sputtering magnetic fields, coil magnets are rarely used, and permanent magnets are used.
Medium frequency sputtering is a kind of magnetron sputtering. The main technology of medium frequency sputtering lies in the design of magnetron sputtering target and the design and application of power supply.
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Design of magnetron sputtering target: The design of magnetic field is the focus of technology. Several famous sputtering target manufacturers in the world are quite professional in designing the target magnetic field. Changing the magnetic field design can get different plasma distribution, plasma. The amount of evaporation, the path of the electrons, so the sputtering target magnetic field is technically confidential.
Power supply design and application: First, consider the type of film layer, analyze which kind of power supply is suitable for which film layer, and use the power supply characteristics to get the desired film effect. At present, the more mature ones are sine wave and pulse square wave output, each with its advantages and disadvantages.
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The target source is balanced and unbalanced, the balanced target source is uniformly coated, and the unbalanced target source coating layer and the substrate have strong bonding force. Balanced target sources are mostly used for semiconductor optical films, and non-equilibrium is mostly used for wear decorative films.
The principle of IF sputtering is the same as that of general dc sputtering. The difference is that DC sputtering uses the cylinder as the anode, while the intermediate frequency sputtering is paired. Whether the cylinder participates must depend on the overall design, and the whole system. During the sputtering process, the arrangement of the anode cathode is related. There are many methods for participating in the ratio period. Different methods can obtain different sputtering yields and obtain different ion densities.
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The advantage of using medium frequency sputtering is that it can be smooth and compact. The film layer has high hardness. The film thickness can grow linearly. It is not poisoned. The temperature rise is moderate, but the requirements of the equipment are high, the working pressure range is narrow, and various control requirements are fast and accurate.
Medium frequency magnetron sputtering requires high target and magnetic field design and working gas pressure. Medium frequency magnetron sputtering is 2 to 3 times higher than DC magnetron sputtering deposition rate. Medium-frequency magnetron sputtering is the work of two targets to prepare a compound film layer. It is difficult to find an optimal poisoning point because of its low ionization rate, and the flow control of the working gas is very strict. If the control is not good, it is difficult to prepare a uniform and good adhesion film layer. Then the design of the magnetic field is mainly the uniformity of the magnetic field distribution, which can not only improve the utilization of the target, but also greatly improve the stability of the best poisoning point. The ion energy and the diffraction of the magnetron sputtering are far. Below the multi-arc target surface, the distance from the workpiece is very important. The bombardment of the workpiece by the too near ion can damage the film layer, and the adhesion of the film layer which is far from the optimum sputtering distance is very poor.
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A magnetron sputtering device is often expensive, but it is easy to spend money on other equipment such as vacuum pumps, MFC, film thickness measurements and ignore the target. Even the best magnetron sputtering equipment without a good target is like drawing a dragon without a finishing touch.
Cooling is necessary for a magnetron sputtering source because a large portion of the energy is converted to heat. If there is no cooling or insufficient cooling, this heat will cause the target temperature to reach more than one thousand degrees to dissolve the entire target.
Sputtering metals and alloys with a magnetron target is easy, and ignition and sputtering are also convenient. This is because the target (cathode), plasma, and splashed part/vacuum cavity can form a loop. However, if a sputter insulator such as ceramic is sputtered, the loop is broken. Therefore, people use high-frequency power, and a strong capacitor is added to the loop. Thus the target becomes a capacitor in the insulation loop. However, the high-frequency magnetron sputtering power supply is expensive, the sputtering rate is small, and the grounding technology is complicated, so it is difficult to adopt it on a large scale. To solve this problem, magnetron reactive sputtering has been invented. That is, with a metal target, argon gas and a reaction gas such as nitrogen or oxygen are added. When the metal target hits the part, it combines with the reaction gas to form a nitride or oxide due to energy conversion.
Related equipment: Magnetron sputtering coating equipment, vacuum coating equipment